Mar. 16, 2015-- ON Semiconductor, driving energy efficient innovations, and power conversion specialist Transphorm, building on their previously announced partnership to bring gallium nitride (GaN) based power solutions to market, today announced the introduction of the co-branded NTP8G202N (TPH3202PS) and NTP8G206N (TPH3206PS) 600 V GaN cascode transistors and a 240 W reference design that utilizes them.
"GaN transistors offer a performance leap for switching power supplies and other applications where efficiency and power density are critical," said Paul Leonard, vice president and general manager of the ON Semiconductor power discrete division. "As more engineers become familiar with the benefits of gallium nitride devices, the demand for GaN-based products will rapidly increase. ON Semiconductor and Transphorm are working to be at the forefront of new development and accelerate widespread adoption in the marketplace."
With typical on-resistances of 150 and 290 mO, the two new products, NTP8G202N (TPH3202PS) and NTP8G206N (TPH3206PS), are offered in an optimized TO-220 package for easy integration with customers' existing circuit board manufacturing capabilities. Both of the 600 V products have been qualified using JEDEC standards and are in mass production.
The NCP1397GANGEVB (TDPS250E2D2) evaluation board is offered as a complete reference design for customers to implement and evaluate GaN cascode transistors in their power designs. The evaluation board offers customers a smaller footprint and better efficiency than power supplies using traditional devices. The boost stage delivers 98 percent efficiency and utilizes the NCP1654 power factor correction controller. The LLC DC-DC stage uses NCP1397 resonant mode controller to offer 97 percent full load efficiency. This performance is achieved while running at 200+ kHz and - impressively - is also able to meet EN55022 Class B EMC performance.
For more information, visit www.onsemi.com.