Greetings!
We are proud to introduce the the expansion of automotive qualified GaN FETs with the release of the 80 V, 6 mΩ EPC2204A and the 80 V, 3.2 mΩ EPC2218A. These devices offer designers significantly smaller and more efficient alternatives to silicon MOSFETs for automotive DC-DC for 48 V - 12 V conversion, infotainment, and lidar for autonomous driving.
48 V Automotive Power:
For 2 kW – 4 kW 48 V-12 V converters, GaN devices allow five times the frequency of silicon MOSFET solutions. Also, with a quarter of the inductance, inductor size and losses are reduced allowing 40% higher current per phase and up to half of the phases for lower system cost and half of the size. Despite the smaller size, efficiency increases up to 98%, greater than 2% higher than MOSFET solutions.
Infotainment:
For lower power DC-DC, such as those used for infotainment applications in the vehicle, GaN allows for operations at 2 MHz and above to avoid interference and enable the smallest solution size.
Advanced Autonomy:
The fast-switching speed of GaN, with sub nanosecond transitions and the capability to generate high current pulses in less than 3 ns, allows for longer range and higher resolution in lidar for autonomous driving, parking, and collision avoidance.