Semiconductor Forum
Semiconductor Info & Resources
for the Power Electronics Industry.
Presentations
IS21.1 Transient Voltage Specification and Reliability for GaN Power Devices4.81 MBIS21.2 Wide Bandgap Quality and Reliability Standards: JEDEC Delivers!8.18 MBIS21.3 New Failure Mechanisms Relevant for SiC Power Devices: Background and How to Tackle Them1.58 MBIS21.4 Recent Advancements in the Understanding of Dynamic On-Resistance and Electromigration in Enhancement Mode GaN Devices5.49 MB
APEC 2022 Industry Session - IS11 - Power Devices: Performance, Achievements & Road Ahead
IS11.1 A New Comparator-Less Miller Clamp Circuit for SiC MOSFET to Prevent Self-Turn-On1.42 MBIS11.2 GaN-Based Lidar Pulse Generator Achieving 320 A in 6 ns: Design and System Integration Considerations5.1 MBIS11.3 1700V SiC MOSFETs: Enhancing Power Conversion from Watts to Megawatts2.54 MBIS11.4 Performance Parameters of SiC MOSFETs for Automotive Inverters1.6 MBIS11.5 WBG Devices Enable Mainstream Adoption of Totem Pole PFC1.77 MBIS11.6 Getting the Most Performance Out of SiC With the Latest Generation Cascode FETs3.65 MBIS11.7 No Two Wide Bandgap Technologies are the Same: Switching Advantages of SuperGaN FET1.54 MB
APEC 2022 Industry Session - IS07 - Integration in WBG Semiconductors: Increased Power Density and Advanced Functionalities at Application Level
IS07.1 Extending GaN Integration to Higher Power & Faster Speeds An Examination of the Progress and Roadmaps for GaN Integration3.53 MBIS07.2 GaN Monolithic Integration Levels: A Journey from Discrete Devices to Power ICs with Complex Functionality7.39 MBIS07.3 GaN Integration Enables Next Generation USB-C Chargers with Ultra-High Power Density and Wide Output Voltage Range4.01 MBIS07.4 Applications, Technology Optimization, and Mass Manufacturing of 8-inch GaN-on-Si Technology7.12 MBIS07.5 Monolithically Integrated Protection Circuits in 650V Power GaN2.18 MBIS07.6 Feature Integration in GaN FETs Leads to Compact and Intelligent System Designs1.78 MBIS07.7 Maximizing WBG Value: Smart Integration in Compact AC/DC Converters2.97 MB
APEC 2021 Industry Session - IS20 - Wide Bandgap Semiconductors in Production How Advanced Power Converters Influence End Product Innovation
APEC 2021 Industry Session - IS16 - Are SiC and GaN Reliable
IS16.1-Leading the GaN Revolution Assessing Early Life Failures of High Voltage GaN.pdf2.42 MBIS16.2-Robustness and Reliability Aspects of SiC Power Devices.pdf897.85 KBIS16.3-Physics Based Models of eGaN® Device Failure Mechanisms.pdf2.93 MBIS16.4-Gate Oxide Reliability Studies Using BTI, RVS, and CVS Methods on 4H-SiC MOSFETs.pdf2.17 MBIS16.5-Active Short Circuit and Repetitive Short Circuit in 1.2kV SiC MOSFETs.pdf1.34 MB
APEC 2021 Industry Session - IS05 - Next Gen Power Electronics Requirements and Solutions
IS05.1-Multi-Port Autonomous Reconfigurable Solar Power Plant (MARS) A Next-Generation Power Electronics Solution.pdf3.29 MBIS05.2-Power Electronics for Solar Grid Integration - A DOE Perspective.pdf2.26 MBIS05.3-Emerging Reliability Issues for the Bulk Power System.pdf4.08 MBIS05.4-Smart Inverter Experiences in Southern California Edison (SCE).pdf1.77 MB
APEC 2021 Industry Session - IS04 - Integration in WBG Semiconductors
IS04.1-High Voltage Integrated Smart GaN Boosting Consumer Applications.pdf761.18 KBIS04.2-High-Efficiency 4-kW Single-Phase CCM Totem-Pole PFC Design.pdf1.73 MBIS04.3-Examples of Applications Benefiting from the Monolithic GaN Power Stage and Redefining the State of the Art.pdf1.97 MBIS04.4-Monolithic GaN Integrated Power Stages and Gate-Drivers the Next Level.pdf3.05 MBIS04.5-PowerCube Ultimate Power Supply Miniaturization Using GaN Integrated Circuits and Patented Architecture Firmware.pdf1.89 MB
APEC 2020 Industry Session - Si and Wide Bandgap Switch Performance
IS04.1 - SiC MOSFET Corner and Statistical SPICE Model Generation.pdf3.07 MBIS04.2 - Power Conversion Switch Technology The Who When Where and Why of using Si SiC and GaN Transistors.pdf2.28 MBIS04.3 - The Path Forward for GaN Power.pdf1.77 MBIS04.4 - 200-mm GaN-On-Silicon Intelligent Power Solutions to Boost Performance of a New Generation of Power.pdf4.24 MBIS04.5 - Advances Through Innovation Transphorm Changes the Game with Gen-IV SuperGaNTM 650V GaN Platform.pdf2.31 MBIS04.6 - Rugged High-Performance 650 1200V SiC MOSFETs with Flawless Gate Oxide Integrity.pdf3.26 MBIS04.7 - Use of 3300V SiC MOSFETs and 1700 V SiC Diodes in Modern Applications.pdf1.16 MB
APEC 2020 Industry Session - Production Use Cases of Wide Bandgap Semiconductors
APEC 2020 Industry Session - The Modernization of Quality & Reliability: Testing Methods & Benchmarks for GaN and SiC Semiconductors
IS23.1 - Extreme Reliability and Test to Fail Methodology for GaN Devices.pdf5.38 MBIS23.2 - Best Practices using Voltage Acceleration for Reliability Testing of High Voltage GaN.pdf1.75 MBIS23.3 - Selected Topics on Power GaN and SiC Reliability.pdf1.94 MBIS23.4 - JEDEC JC-70 Datasheet, Qualification, and Test Standards for Wide Bandgap Progress and Impact.pdf3.44 MBIS23.5 - SiC MOSFET Reliability for EV Drivetrain.pdf2.01 MBIS23.6 - GaN Systems Demonstrates Reliability based on Qualification and Lifetime Data.pdf1.41 MB
APEC 2020 Industry Session - Challenges of Semiconductor System Integration for Power Electronics
APEC 2019 Industry Session - Getting Up To Speed on Switching: Wide Band Gap & Other High Performance Components
IS04.1 Magnetics Study Enables New Class of High Density ACDC Converters.pdf1.37 MBIS04.2 High Performance SiC MOSFETs and Diodes Fabricated in High-Volume 6-Inch CMOS Fab.pdf2.34 MBIS04.3 GaN Integrated Circuits for Highest Performance Power Supplies.pdf2.31 MBIS04.4 GaN-on-Silicon Intelligent Power Switch Solutions.pdf2.09 MBIS04.5 Avalanche and Short-circuit Robustness of High Voltage SiC DMOSFETs.pdf1.5 MBIS04.6 CoolSiC Power MOSFETs New Additions to the Portfolio.pdf3.41 MBIS04.7 How GaN Helps Power Supplies Achieve Extraordinary Levels of Efficiency.pdf1.33 MB
APEC 2019 Industry Session - Current Reliability & Product Qualification Topics for SiC & GaN Wide Band Gap Devices
IS11.1 Update on GaN and SiC Activities Within JEDEC JC-70 Committee.pdf1.97 MBIS11.2 Meeting Industry Requirements for GaN Device Reliability.pdf1.77 MBIS11.3 650V GaN HEMT Reliability for Automotive Applications.pdf1.97 MBIS11.4 Systematic Approach to GaN Power IC Reliability.pdf2.4 MBIS11.5 Performance, Reliability and Yield Considerations in State-of-the-Art SiC Diode and MosFET Technologies During Ramp-Up.pd3.03 MBIS11.6 SiC Device Reliability.pdf2 MBIS11.7 GaN Reliability for Automotive Testing Beyond AEC-Q.pdf3.16 MB