ounded in 1998, Mornsun Guangzhou Science & Technology Limited has outgrown its peers in China and become a leading power converter manufacturer, offering comprehensive vertical services and power solutions to customers all over the world. The company is strategically located in Guangzhou, China, with three R&D centers, two manufacturing locations and a worldwide distribution network covering 40 countries.

To ensure product quality and promote innovations, MORNSUN's Total Quality Management (TQM) includes a complete management system with emphasis on technological development, material selection, design for manufacturability, failure analysis, personnel training and project management. This combined with an industry certification for ISO9002, ISO14001, OHSMS18001, SA8000 and ISO/TS16949 makes their products robust and reliable for most industrial and harsh environments.

MORNSUN builds products with magneto electric isolation technology, offerings include AC/DC converters, DC/DC converters, isolation amplifiers, IGBT drivers, LED drivesr and EMC auxiliary devicse. Power converters are in the range of 0.25 - 240 watts, with efficiency up to 93%, and low standby power consumption. They come with either 1500VDC/3000VDC/6000VDC or 3500/4000VAC isolation. They also feature extra protections like UVP, UVP, OVP, SCP and OCP, targeting automation & control, fire & security, power distribution and energy system, M2M and IoT market.

Besides product development, technology research and innovation are other focuses of the company. With over 200 engineers and institutional collaborative programs, their 400+ patents include new technologies, software, circuit design, product design and the manufacturing process. Several of these patents are already deployed in products like the R3 DC/DC converters, with MORNSUN's own PWM controller and variable frequency technology. Through innovation, MORNSUN has built an industry first ultra-wide DC-DC converter with input from 200 to 1500VDC, targeting PV industry, wind power, high voltage and energy storage systems. MORNSUN also works with semiconductor companies for reference design, such as the QA series featuring high operating temperature and isolation voltage, differential output, and low isolation capacitance. These are well received by the IGBT/SiC manufacturer and always appears in the gate driver reference design.

MORNSUN knows that good citizenship is good business, and is committed to environmental protection, paying close attention to Corporate Social Responsibility and the ElCC Code of Conduct. To that end, MORNSUN will continue to reduce energy consumption, to move to "paperless" documentation internally, and to invest in new, more efficient and energy saving production equipment. Let's work together and have MORNSUN power your product and empower your ideas.

For more details, please visit www.mornsun-power.com or email info@mornsun.cn.

Provided by Tiger Li, Sales Director, MORNSUN

 
ransphorm Inc. is a global semiconductor company moving the power electronics industry beyond the limitations of silicon. The company is making it possible for high voltage applications to achieve over 95% efficiency and over 40% reduction in energy loss through the use of its—and, notably, the industry's only—JEDEC-qualified gallium nitride (GaN) FETs.

Transphorm co-founders Dr. Umesh Mishra and Dr. Primit Parikh are well-known for their GaN research and development efforts at the University of California, Santa Barabra where Dr. Mishra still holds residency today. In 1996, the team raised the company Nitres, Inc. to develop GaN-on-Si LEDs. After Nitres' successful acquisition, Dr. Mishra and Dr. Parikh founded Transphorm in 2007, this time focusing on cultivating GaN-on-Si's benefits in switch-mode power supplies.

Transphorm TDPS2800E2C1 2.8kW totem-pole PFC evaluation platform

GaN is a wide bandgap semiconductor with inherent traits that make it ideal for dramatically increasing power density, eclipsing what traditional silicon solutions can achieve. Design engineers can use GaN devices in several topologies—hard-switched half-bridge, buck, or boost. However, where GaN truly excels is in a bridgeless totem-pole PFC, an architecture that requires GaN to achieve its fullest potential. In this use case, GaN yields a marked higher performance and an overall lower system-level cost than incumbent solutions.

GaN-on-Si's attributes make it an enticing solution for high voltage applications such as:

Automotive—On-Board Chargers: Reduction of electrical power conversion loss in a potentially smaller system footprint will positively impact the electric and hybrid automobiles' performance. Transphorm's GaN FETs can replace incumbent IGBTs in a totem-pole PFC to achieve >99% efficiency while enabling bi-directional power transfer with fewer components.

Data Centers—Servers: Inarguably, data centers are one of the largest consumers of electricity—projected to burn roughly 140 billion kilowatt-hours annually by 2020 according to the National Resource Defense Council. When replacing silicon MOSFETs with Transphorm's GaN FETs, power supplies are able to increase the total system efficiency to >96% for twice the output power in the same form factor, while exceeding today's 80 Plus Titanium standard.

Solar Energy—PV Inverters: Transphorm's GaN FETs enable PV inverters to increase their switching frequencies by as much as 4x the industry standard. This equates to operating at 100kHz with a 40% reduction in size—an invaluable benefit for densely populated regions with rising dependency on solar energy.

To put power consumption in perspective—every time electricity is taken from an outlet, it is typically converted to another form of power for consumption. With every conversion there is loss, and when you add the total losses in the U.S. alone, it comes out to 300 terawatt hours. Part of that loss comes from larger applications such as data centers, but it also occurs even in the laptop adapter we are all familiar with. The significance of 300 terawatt hours—the entire western United States uses 230 terawatt hours annually. In particular, Las Vegas consumes 33 terawatt hours, San Francisco 6 terawatt hours. Effectively, if you save 300 terawatt hours—which is what Transphorm aims to do—you can actually say that you are taking the western United States off the grid.

Since the company's launch, Transphorm has been wholly-focused on delivering the highest quality, highest reliability GaN devices capable of serving the above markets and more. To ensure this, Transphorm relies on its unique vertically-integrated approach where its engineering experts participate and innovate at every stage of the GaN technology's development—from design to wafer fabrication through to device delivery and application integration support.

600V and 650V GaN FETs in TO-XXX and PQFN88 packages

Transphorm's integrated approach is driven by a team with a combined 300+ years of GaN engineering experience. Throughout the past nine years, they have reached significant milestones advancing not only Transphorm's GaN innovations, but positively affecting the industry as a whole. The company's technical legacy tracks through a number of milestones:

• Resolving dynamic on-resistance for 600V GaN (2010)
• First 600V GaN-on-Si (2011)
• First—and only—600V GaN device to be JEDEC-qualified (2013)
• First generation devices (2014)
• Second generation devices (2015)

Headquartered in Goleta, CA, Transphorm has offices in San Jose, CA, and Yokohama, Japan, as well as a global sales force and distributor network. As of 2013, Transphorm holds a manufacturing partnership with Fujitsu, leveraging its automotive-certified fabrication facility. The company is in production with a comprehensive portfolio consisting of 600V and 650V discrete FETs in TO-XXX and PQFN88 packages for power levels up to 4.5kW. For more information, please visit transphormusa.com.

Provided by Andrea Fasano, Senior Manager,
Marketing Communications, Transphorm Inc.

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