|
Monday, October 30 – Wednesday, November 1, 2017 Hyatt Regency Tamaya Resort, Albuquerque, NM USA
he 5th IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA, www.wipda.org ), sponsored by IEEE and PSMA, is a fast-growing yearly event which provides a forum for device scientists, circuit designers, and application engineers to share technology updates, research findings, development experience, and application knowledge. The 5th WiPDA will be held from Oct. 30 to Nov. 1, 2017, at Hyatt Regency Tamaya Resort, Albuquerque, NM.
What to see in Albuquerque?
Albuquerque is home to the University of New Mexico (UNM), Kirtland Air Force Base, Sandia National Laboratories, the National Museum of Nuclear Science & History, and the Lovelace Respiratory Research Institute. The Sandia Mountains run along the eastern side of Albuquerque and the Rio Grande river flows through the city, north to south. Albuquerque is also the home of the International Balloon Fiesta, the world's largest gathering of hot-air balloons from around the globe. The workshop venue is the Hyatt Regency Tamaya Resort just north of Albuquerque. It offers a perfect combination of luxurious amenities, culture, history, and stunning landscapes that create a one-of-a-kind experience. Visitors can play a round of championship golf at the Twin Warriors golf course, ride a rescue horse, or watch a radiant sunset while dining on fresh, regional cuisine at the Corn Maiden restaurant. This year's poster session and banquet will be held at the Cottonwoods Pavilion, located on the Tamaya grounds along the banks of the Rio Grande river.
This year's event will have a similar structure as previous years, including an extensive program of tutorials; keynote, technical, and poster sessions; a panel discussion; an exhibition; and a banquet. The topics of interest include, but are not limited to:
- Heteroepitaxial and bulk materials growth
- Gate dielectrics and surface passivation
- Device structures and fabrication techniques
- Device characterization and modeling
- Very high efficiency and compact converters
- SOAs including short-circuit, spike, and transient tolerance
- Harsh environment (e.g. high temperature) operation and reliability
- Packaging, power modules, and ICs
- Hard-switched and soft-switched applications
- Common-mode and EMI management
- Gate drive and other auxiliary circuits
- High-performance passive components
- Applications in renewable energy and storage, transportation, industrial drives, and grid power systems
Technical Papers: Technical papers addressing all aspects of wide-bandgap power electronics are welcome. Technical oral sessions will be held Tuesday and Wednesday, and a poster session will be held Tuesday night. All presented papers will be included in the conference proceedings and submitted to the IEEExplore database.
Featured Keynote Sessions:
WIPDA 2017 keynote sessions will be held Tuesday and Wednesday, in which leading experts from government, academia, industry, and research institutes will share their insights on technology developments and future trends. As some highlights of this year, we can expect keynote speeches including: "Current and Future Directions in Power Electronic Devices and Circuits based on Wide Band-Gap Semiconductors" from Dr. Isik C. Kizilyalli (Program Director from ARPA-E), "GaN Power ICs: Device Integration Delivers Application Performance" by Dr. Nick Fichtenbaum (Navitas Semiconductor), and "Electrical and Thermal Considerations for Wide Bandgap Power Electronics" by Dr. Andrew Alleyne from University of Illinois Urbana-Champaign. Speakers from the U.S. Army Research Laboratory (ARL) and Infineon will share their experience and vision on SiC and GaN development and applications in their talks "Enabling the Development of Power Electronics Applications through Advancements in SiC Power Devices" and "600V GaN Power Device: The Long Journey to Market Success", respectively. More keynote summaries can be found at www.wipda.org.
Tutorials, Panel Session, and Exhibitions
WiPDA 2017 will offer tutorials covering both device and application topics on Monday afternoon. The tutorial speakers are from both universities (Purdue University, North Carolina State University, Virginia Tech, and University of Alabama) and companies (John Deere, Texas Instruments, and Infineon Technologies). As one of the highlight, Dr. James Cooper from Purdue University will share his vision on SiC devices in his tutorial "SiC Power Devices: Physics, Current Status, and Future Trends". More tutorial summaries can be found at www.wipda.org.
Two panel sessions focused on high-voltage SiC and high-frequency GaN featuring leading experts from US federal agencies, industry, and academia will be part of the meeting. Also, a number of booths will be available for exhibition.
Student Travel Grants
The organizing committee anticipates being able to fund student travel grants at supported equally by PELS and PSMA.
If you have any questions, please contact the organizing committee:
Robert Kaplar, Sandia National Labs (rjkapla@sandia.gov )
Maryam Saeedifard, Georgia Tech (maryam@ece.gatech.edu)
Sameh Khalil, Infineon (sameh.khalil@infineon.com)
Mike Mazzola, Mississippi State (mazzola@ece.msstate.edu)
Fang Luo, University of Arkansas (fangluo@uark.edu)
We are looking forward to meeting you in Albuquerque, New Mexico! |