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he 8th Annual IEEE / PMSA Workshop on Wide Bandgap Power Devices and Applications (WiPDA) will be held in Redondo Beach, California from October 25 to 27, 2020. This annual event provides engineers and scientists with opportunities to share their expertise in wide bandgap (WBG) semiconductor technology. This year's workshop features tutorials on October 25, 2020. The following two days will host keynote sessions, panel sessions, technical sessions, and a poster session that covers four technical tracks: silicon carbide (SiC) power devices, SiC applications, gallium nitride (GaN) power devices, GaN applications, and new this year, Gallium Nitride (GaN) RF devices and applications and International Technology Roadmap for Wide Bandgap Power Semiconductors) (ITRW). Topics in emerging WBG materials will also be solicited.
There will be many opportunities to network with leading WBG specialists in industry, academia and national laboratories, especially at the Industry and Sponsors Exhibition, which occurs simultaneously with the workshop. A reception will be held October 25, 2020 and a banquet is planned for October 26, 2020. The workshop is brought to you by the IEEE Power Electronics Society (PELS), the Power Sources Manufacturers Association (PSMA), and the IEEE Electron Devices Society (EDS). The General Chair is Sameh Khalil, Lead Principal Engineer, GaN Device Reliability and Product Engineering Management at Infineon Technologies. He is supported by Vice Chair Helen Li, Professor of Electrical and Computer Engineering Department, FAMU-FSU college of Engineering Key Dates: - June 1, 2020: Abstract submission deadline.
- July 17, 2020: Notification of the acceptance.
- August 28, 2020: Submission to mentor
- September 9, 2020: Final paper submission deadline for workshop proceedings.
Call for Abstracts:
The abstract submission portal will open mid spring to accept authors' manuscripts. Researchers are encouraged to submit their latest findings on the design and fabrication of WBG power devices, their insertion in power electronics circuits/systems, and on technology of SiC, GaN, their reliability and other emerging, high performance WBG power semiconductors.
Authors and speakers are encouraged to submit their latest research findings in this WiPDA world-renown symposium. For abstracts proposals, the technical topics of interest include:
- Heteroepitaxial & Bulk Materials Growth
- Gate Dielectrics & Surface Passivation
- Device Structures & Fabrication Techniques
- Device Characterization & Modeling
- Very-High Efficiency Or Compact Converters
- Safe Operating Areas Of Wide Bandgap Devices, Including Short Circuit, Spike, &Transient Tolerance
- Harsh Environment (High Temperature) Operation & Reliability
- Packaging Power Modules & ICs
- Hard-Switched & Soft-Switched Application Analysis
- Gate Drive & Other Auxiliary Circuits
- High-Performance Passive Components
- Applications in Renewable Energy & Energy Storage, Transportation, Industrial Drives, & Grid Power Systems
- Wide Band Gap System Design Philosophies & Strategies
- Radio Frequency (RF) GaN (NEW)
- Technology Roadmap of Wide Bandgap Including Devices, Applications and Packaging (NEW)
We look forward to seeing you this fall in Redondo Beach, California, USA.
| Provided by:
Renee Yawger
WiPDA 2020 Publicity Chair |
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